Datasheet4U Logo Datasheet4U.com

MCM72BA32 - 256KB and 512KB BurstRAM Secondary Cache

Key Features

  • g Voltage Range) Input High Voltage Input Low Voltage Symbol VCC VIH VIL Min 4.75 2.2.
  • 0.5.
  • Max 5.25 VCC + 0.3.
  • 0.8 Unit V V V.
  • VIL (min) =.
  • 0.5 V dc; VIL (min) =.
  • 2.0 V ac (pulse width ≤ 20.0 ns) for I ≤ 20.0 mA.
  • VIH (max) = VCC + 0.3 V dc; VIH (max) = VCC + 2.0 V ac (pulse width ≤ 20.0 ns) for I ≤ 20.0 mA DC.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MCM03P02A P-Channel MOSFET MCC
MCM1206 P-Channel MOSFET MCC
MCM1208 P-Channel MOSFET MCC
MCM1216 P-Channel MOSFET MCC
MCM1216A P-CHANNEL MOSFET MCC

Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
MCM72BA64 256KB and 512KB BurstRAM Secondary Cache
MCM72BB32 256KB and 512KB BurstRAM Secondary Cache
MCM72BB64 256KB and 512KB BurstRAM Secondary Cache
MCM72BF32 256KB and 512KB BurstRAM Secondary Cache
MCM72BF64 256KB and 512KB BurstRAM Secondary Cache

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MCM72BA32/D 256KB and 512KB BurstRAM™ Secondary Cache Module for Pentium™ The MCM72BA32SG and MCM72BA64SG are designed to provide a burstable, high performance, 256K/512K L2 cache for the Pentium microprocessor. The modules are configured as 32K x 72 and 64K x 72 bits in a 136 pin dual readout single inline memory module (DIMM). The module uses four of Motorola’s MCM67B518 or MCM67B618 BiCMOS BurstRAMs. Bursts can be initiated with either address status processor (ADSP) or address status controller (ADSC). Subsequent burst addresses are generated internal to the BurstRAM by the burst advance (ADV) input pin. Write cycles are internally self timed and are initiated by the rising edge of the clock (K) input.