MGP4N60E - Insulated Gate Bipolar Transistor

Motorola Semiconductor (now NXP Semiconductors)

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MGP4N60E insulated gate bipolar transistor by Motorola Semiconductor (now NXP Semiconductors) - Datasheet Preview

Datasheet Details

Part number	MGP4N60E
Manufacturer	Motorola Semiconductor (now NXP Semiconductors)
File Size	124.46 KB
Description	Insulated Gate Bipolar Transistor
Datasheet	MGP4N60E Datasheet

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Full PDF Text Transcription (Reference)

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MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MGP4N60E/D Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications requiring both a high temperature short circuit capability and a low VCE(on). It also provides fast switching characteristics and results in efficient operation at high frequencies. This new E–series introduces an Energy–efficient, ESD protected, and short circuit rugged device.