Click to expand full text
MAXIMUM RATINGS
Rating Drain-Source Voltage Gate-Source Voltage Gate Current
Symbol vDs Vgs
'G
THERMAL CHARACTERISTICS
Characteristic
Symbol
•Total Device Dissipation, TA = 25°C
Derate above 25°C
PD
Storage Temperature
T StQ
•Thermal Resistance Junction to Ambient
R&JA
•Package mounted on 99.5% alumina 10 x 8 x 0.6 mm.
Value 25 25 10
Max
350
2.8 150 357
Unit Vdc Vdc
mAdc
Unit
mW
mW/°C
°C °C/W
MMBFU310
CASE 318-02/03, STYLE 10
SOT-23 (TO-236AA/AB)
FET TRANSISTOR
N-CHANNEL
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage
G(l = -1.