Datasheet4U Logo Datasheet4U.com

MMBFU310LT1 - JFET Transistor

Key Features

  • g from preheating to soldering, the maximum temperature gradient shall be 5°C or less.
  • After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress.
  • Mechanical stress or shock should not be applied during cooling.
  • Soldering a device without preheating can cause excessive.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MMBFU310LT1 JFET Transistor ON
MMBFU310LT1G N-Channel JFET Transistor ON Semiconductor
MMBF0201NL N-Channel MOSFET ON Semiconductor
MMBF0201NLT1 Power MOSFET ON Semiconductor
MMBF0201NLT1G Power MOSFET ON Semiconductor

Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
MMBFU310 FET TRANSISTOR
MMBF0201 N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET
MMBF0201N N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET
MMBF0201NLT1 TMOS Single N-Channel FET
MMBF0202PLT1 P-CHANNEL ENHANCEMENT-MODE TMOS MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBFU310LT1/D JFET Transistor N–Channel 2 SOURCE 3 GATE MMBFU310LT1 Motorola Preferred Device 1 DRAIN 3 1 2 MAXIMUM RATINGS Rating Drain–Source Voltage Gate–Source Voltage Gate Current Symbol VDS VGS IG Value 25 25 10 Unit Vdc Vdc mAdc CASE 318 – 08, STYLE 10 SOT– 23 (TO – 236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA TJ, Tstg 556 – 55 to +150 Unit mW mW/°C °C/W °C DEVICE MARKING MMBFU310LT1 = 6C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Gate–Source Breakdown Voltage (IG = –1.