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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMBFU310LT1/D
JFET Transistor
N–Channel
2 SOURCE 3 GATE
MMBFU310LT1
Motorola Preferred Device
1 DRAIN
3 1 2
MAXIMUM RATINGS
Rating Drain–Source Voltage Gate–Source Voltage Gate Current Symbol VDS VGS IG Value 25 25 10 Unit Vdc Vdc mAdc CASE 318 – 08, STYLE 10 SOT– 23 (TO – 236AB)
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA TJ, Tstg 556 – 55 to +150 Unit mW mW/°C °C/W °C
DEVICE MARKING
MMBFU310LT1 = 6C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Gate–Source Breakdown Voltage (IG = –1.
MMBFU310LT1 Datasheet
