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MMDF2N02E - Dual MOSFET

Key Features

  • A VGS = 10 V TJ = 25°C t, TIME (ns) td(off) tf tr 10 td(on) 7 6 IS, SOURCE.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMDF2N02E/D Designer's ™ Data Sheet Medium Power Surface Mount Products MMDF2N02E DUAL TMOS MOSFET 3.6 AMPERES 25 VOLTS RDS(on) = 0.1 OHM TMOS Dual N-Channel Field Effect Transistors MiniMOS™ devices are an advanced series of power MOSFETs which utilize Motorola’s TMOS process. These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain–to–source diode has a low reverse recovery time. MiniMOS devices are designed for use in low voltage, high speed switching applications where power efficiency is important.