MMDF2N06V - Dual MOSFET

Datasheet Summary

Features

of TMOS V.
On.
resistance Area Product about One.
half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology.
Faster Switching than E.
FET Predecessors G S MMDF2N06V DUAL TMOS MOSFET 3.3.

Motorola

📥 Download Datasheet

Datasheet Details

Part number	MMDF2N06V
Manufacturer	Motorola
File Size	113.71 KB
Description	Dual MOSFET
Datasheet	MMDF2N06V Datasheet
Additional preview pages of the MMDF2N06V datasheet.

📁 Similar Datasheet

MMDF2N02E - Power MOSFET (ON Semiconductor)
MMDF2C02E - Power MOSFET (ON Semiconductor)
MMDF2C02ER2 - Power MOSFET (ON Semiconductor)
MMDF2C02HD - Power MOSFET (ON Semiconductor)
MMDF2C03HD - Power MOSFET (ON Semiconductor)
MMDF2P01HD - Power MOSFET (ON Semiconductor)
MMDF2P02E - Power MOSFET (ON Semiconductor)
MMDF2P02HD - Power MOSFET (ON Semiconductor)
MMDF2P03HD - Power MOSFET (ON Semiconductor)
MMDF1300 - Power MOSFET (ON)

Other Datasheets by Motorola

MMDF2N06VL - Dual MOSFET
MMDF2N02E - Dual MOSFET
MMDF2N05ZR2 - Dual MOSFET
MMDF2C01HD - Dual MOSFET
MMDF2C02E - Dual MOSFET
MMDF2C02HD - Dual MOSFET
MMDF2C03HD - Dual MOSFET
MMDF2P01HD - Dual MOSFET

Full PDF Text Transcription

Click to expand full text

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMDF2N06V/D Product Preview TMOS V™ SO-8 for Surface Mount N–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS E–FET designs, TMOS V is designed to withstand high energy in the avalanche and commutation modes.

Published: May 9, 2005 |