MMDF2N06VL Overview
Key Features
- On–resistance Area Product about One–half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology
- Avalanche Energy Specified
- IDSS and VDS(on) Specified at Elevated Temperature
- Static Parameters are the Same for both TMOS V and TMOS E–FET
- Miniature SO–8 Surface Mount Package – Saves Board Space
- Mounting Information for SO–8 Package Provided Rating Drain–to–Source Voltage Drain–to–Gate Voltage, (RGS = 1 MΩ) Gate–to–Source Voltage
- Continuous Drain Current
- Continuous @ TA = 25°C Drain Current
- Continuous @ TA = 100°C Drain Current
- Starting TJ = 25°C (VDD = 25 Vdc
