MMFT2955E Datasheet | Motorola Semiconductor

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMFT2955E/D Medium Power Field Effect Transistor P- Channel Enhancement Mode Silicon Gate TMOS E- FETt SOT- 223 for Surface Mount This advanced E- FET is a TMOS medium power MOSFET designed to withstand high energy in the avalanche and mutation modes. This new energy efficient device also offers a drain- to- source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and mutating safe operating areas are critical and offer additional safety margin against...