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MMFT2955E - MEDIUM POWER MOSFET

Key Features

  • 80% OF RATED VDSS VdsL = Vf + Li ⋅ dlS/dt Figure 10. Commutating Safe Operating Area (CSOA) Figure 11. Commutating Safe Operating Area Test Circuit BVDSS L VDS IL VDD t RG VDD tP t, (TIME) IL(t) Figure 12. Unclamped Inductive Switching Test Circuit Figure 13. Unclamped Inductive Switching Waveforms Motorola TMOS Power MOSFET Transistor Device Data 5 MMFT2955E VGS 1800 1600 1400 C,.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMFT2955E/D Medium Power Field Effect Transistor P–Channel Enhancement Mode Silicon Gate TMOS E–FETt SOT–223 for Surface Mount This advanced E–FET is a TMOS medium power MOSFET designed to withstand high energy in the avalanche and commutation modes. This new energy efficient device also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.