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MRF372 - THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTOR

General Description

C1 C2 2.2 pF, Chip Capacitor, B Case, ATC 0.5 5.0 pF, Variable Capacitor, B Case, Johansen Gigatrim 47.0 pF, Chip Capacitors, B Case, ATC 100 pF, Chip Capacitors, B Case, ATC 10.0 pF, Chip Capacitor, B Case, ATC 2.7 pF, Chip Capacitors, A Case, ATC 10.0 pF, Chip Capacitor, B Case, ATC 5.1

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Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
MRF373 The RF MOSFET Line RF Power Field Effect Transistors
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF372/D The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common source amplifier applications in 32 volt transmitter equipment. • Typical Narrowband Two–Tone Performance @ f1 = 857 MHz, f2 = 863 MHz, 32 Volts Output Power – 180 Watts PEP Power Gain – 17 dB Efficiency – 36% www.DataSheet4U.com IMD – –35 dBc • Typical Broadband Two–Tone Performance @ f1 = 857 MHz, f2 = 863 MHz, 32 Volts Output Power – 180 Watts PEP Power Gain – 14.