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MRF9011LT1 - NPN Silicon High-Frequency Transistor

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBR901LT1/D The RF Line NPN Silicon High-Frequency Transistor Designed primarily for use in high–gain, low–noise small–signal amplifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching times. • High Current–Gain — Bandwidth Product • Low Noise Figure @ f = 1.0 GHz — NF(matched) = 1.8 dB (Typ) (MRF9011LT1) NF(matched) = 1.9 dB (Typ) (MMBR901LT1, T3) • High Power Gain — Gpe(matched) = 13.5 dB (Typ) @ f = 1.0 GHz (MRF9011LT1) Gpe(matched) = 12.0 dB (Typ) @ f = 1.