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MRF9745T1 - HIGH FREQUENCY POWER TRANSISTOR LDMOS FET

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF9745T1/D Advance Information The RF Small Signal Line Silicon Lateral FET MRF9745T1 30 dBm, 900 MHz HIGH FREQUENCY POWER TRANSISTOR LDMOS FET N–Channel Enhancement–Mode MOSFET Designed for use in low voltage, moderate power amplifiers such as portable analog and digital cellular radios and PC RF modems. • Performance Specifications at 5.8 V, 900 MHz: Output Power = 30 dBm Min Power Gain = 10 dB Typ Efficiency = 50% Min • Guaranteed Ruggedness at Load VSWR = 20:1 • New Plastic Surface Mount Package • Available in Tape and Reel Packaging.