Datasheet4U Logo Datasheet4U.com

MTD3302 - SINGLE TMOS POWER MOSFET 30 VOLTS RDS

Key Features

  • r>.
  • 1848 51 Ting Kok Road, Tai Po, N. T. , Hong Kong. 852.
  • 26629298.
  • http://sps. motorola. com/mfax/ HOME PAGE: http://motorola. com/sps/ JAPAN: Nippon Motorola Ltd. : SPD, Strategic Planning Office, 141, 4.
  • 32.
  • 1 Nishi.
  • Gotanda, Shagawa.
  • ku, Tokyo, Japan. 03.
  • 5487.
  • 8488 4 ◊ MTD3302/D Motorola TMOS Power MOSFET Transistor Device Data.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MTD300A20Q8 Dual N-Channel Enhancement Mode Power MOSFET Cystech Electonics
MTD300N20J3 N-Channel Enhancement Mode Power MOSFET Cystech Electonics
MTD300N20J3 N-Channel MOSFET INCHANGE
MTD3010PM Photo Diode Marktech Corporate
MTD3055V N-Channel MOSFET Fairchild Semiconductor

Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
MTD3055E TMOS IV N-Channel Enhancement-Mode Power Field Effect Transistor DPAK
MTD3055EL TMOS IV Power Field Effect Transistor
MTD3055V TMOS POWER FET
MTD3055VL TMOS POWER FET
MTD3N25E TMOS POWER FET 3 AMPERES 250 VOLTS RDS

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD3302/D Product Preview WaveFET™ Power Surface Mount Products MTD3302 ™ HDTMOS Single N-Channel Field Effect Transistor WaveFET™ devices are an advanced series of power MOSFETs which utilize Motorola’s latest MOSFET technology process to achieve the lowest possible on–resistance per silicon area. They are capable of withstanding high energy in the avalanche and commutation modes and the drain–to–source diode has a very low reverse recovery time. WaveFET™ devices are designed for use in low voltage, high speed switching applications where power efficiency is important.