MTD3N25E datasheet by Motorola Semiconductor (now NXP Semiconductors).
| Part number | MTD3N25E |
|---|---|
| Datasheet | MTD3N25E_Motorola.pdf |
| File Size | 253.49 KB |
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| Description | TMOS POWER FET 3 AMPERES 250 VOLTS RDS |
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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD3N25E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor DPAK for Surface Mount Designer's MTD3N25E Motorola Preferred Device N Channel Enhancement Mode Silicon Gate This advanced TMOS E FET is designed to withstand high energy in the avalanche and mutation modes. The new energy efficient design also offers a drain to source diode with a fast...
View all Motorola Semiconductor (now NXP Semiconductors) datasheets
| Part Number | Description |
|---|---|
| MTD3055E | TMOS IV N-Channel Enhancement-Mode Power Field Effect Transistor DPAK |
| MTD3055EL | TMOS IV Power Field Effect Transistor |
| MTD3055V | TMOS POWER FET |
| MTD3055VL | TMOS POWER FET |
| MTD3302 | SINGLE TMOS POWER MOSFET 30 VOLTS RDS |
| MTD10N05E | TMOS4 POWER FET |
| MTD12N06EZL | High Energy Power FET DPAK |
| MTD1302 | TMOS POWER FET |
| MTD15N06V | TMOS POWER FET |
| MTD15N06VL | TMOS POWER FET |
