MTP3N100E
MTP3N100E is TMOS POWER FET 3.0 AMPERES 1000 VOLTS manufactured by Motorola Semiconductor.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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Designer's
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TMOS E-FET .™ Power Field Effect Transistor N- Channel Enhancement- Mode Silicon Gate
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Data Sheet
Motorola Preferred Device
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage- blocking capability without degrading performance over time. In addition, this advanced TMOS E- FET is designed to withstand high energy in the avalanche and mutation modes. The new energy efficient design also offers a drain- to- source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters...
