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MTP3N100E Datasheet Tmos Power Fet 3.0 Amperes 1000 Volts

Manufacturer: Motorola Semiconductor (now NXP Semiconductors)

Overview: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP3N100E/D Designer's www.DataSheet4U.com TMOS E-FET .

MTP3N100E datasheet preview

Datasheet Details

Part number	MTP3N100E
Manufacturer	Motorola Semiconductor (now NXP Semiconductors)
File Size	175.15 KB
Description	TMOS POWER FET 3.0 AMPERES 1000 VOLTS
Datasheet	MTP3N100E_Motorola.pdf

Key Features

d components. Most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. 2800 Ciss 2400 2000 1600 Crss 1200 800 VDS = 0 V VGS = 0 V TJ = 25°C 10000 VGS = 0 V Ciss 1000 C,.

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