MTP3N100E datasheet by Motorola Semiconductor (now NXP Semiconductors).
| Part number | MTP3N100E |
|---|---|
| Datasheet | MTP3N100E_Motorola.pdf |
| File Size | 175.15 KB |
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| Description | TMOS POWER FET 3.0 AMPERES 1000 VOLTS |
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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP3N100E/D Designer's .. TMOS E-FET .™ Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate ™ Data Sheet MTP3N100E Motorola Preferred Device This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage blocking capability without degrading performance over time. In addition, this advanced TMOS E FET is designed...
View all Motorola Semiconductor (now NXP Semiconductors) datasheets
| Part Number | Description |
|---|---|
| MTP3N100 | Power MOSFET |
| MTP3N120E | TMOS POWER FET 3.0 AMPERES 1000 VOLTS |
| MTP3N25E | TMOS POWER FET 3.0 AMPERES 250 VOLTS |
| MTP3N50 | Power Field Effect Transistor |
| MTP3N50E | TMOS POWER FET |
| MTP3N55 | Power Field Effect Transistor |
| MTP3N60 | Power Field Effect Transistor |
| MTP3N75 | Power Field Effect Transistor |
| MTP3N80 | Power Field Effect Transistor |
| MTP3N95 | Power MOSFET |
