MTP3N25E datasheet by Motorola Semiconductor (now NXP Semiconductors).
| Part number | MTP3N25E |
|---|---|
| Datasheet | MTP3N25E_Motorola.pdf |
| File Size | 177.46 KB |
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| Description | TMOS POWER FET 3.0 AMPERES 250 VOLTS |
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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP3N25E/D Designer's .. TMOS E-FET .™ Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate ™ Data Sheet MTP3N25E Motorola Preferred Device This advanced TMOS E FET is designed to withstand high energy in the avalanche and mutation modes. The new energy efficient design also offers a drain to source diode with a fast recovery time.
View all Motorola Semiconductor (now NXP Semiconductors) datasheets
| Part Number | Description |
|---|---|
| MTP3N100 | Power MOSFET |
| MTP3N100E | TMOS POWER FET 3.0 AMPERES 1000 VOLTS |
| MTP3N120E | TMOS POWER FET 3.0 AMPERES 1000 VOLTS |
| MTP3N50 | Power Field Effect Transistor |
| MTP3N50E | TMOS POWER FET |
| MTP3N55 | Power Field Effect Transistor |
| MTP3N60 | Power Field Effect Transistor |
| MTP3N75 | Power Field Effect Transistor |
| MTP3N80 | Power Field Effect Transistor |
| MTP3N95 | Power MOSFET |
