MTP3N25E Description
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP3N25E/D Designer's .. TMOS E-FET .™ Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate ™ Data Sheet MTP3N25E Motorola Preferred Device This advanced TMOS E FET is designed to withstand high energy in the avalanche and mutation modes. The new energy efficient design also offers a drain to source diode with a fast recovery time.