MTP3N120E Description
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP3N120E/D Designer's Data Sheet .. TMOS E-FET .™ Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate This advanced high voltage TMOS E FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain to source diode with fast recovery time.