MTP55N06Z datasheet by Motorola Semiconductor (now NXP Semiconductors).
| Part number | MTP55N06Z |
|---|---|
| Datasheet | MTP55N06Z_Motorola.pdf |
| File Size | 143.24 KB |
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| Description | TMOS POWER FET 55 AMPERES 60 VOLTS RDS(on) = 18 mohm |
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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP55N06Z/D Advance Information TMOS E-FET.™ Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate This advanced high voltage TMOS E FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain to source diode with fast recovery time. Designed for high voltage, high...
View all Motorola Semiconductor (now NXP Semiconductors) datasheets
| Part Number | Description |
|---|---|
| MTP50N05E | N-Channel Power FET |
| MTP50N06EL | N-Channel Power FET |
| MTP50N06V | N-Channel Power FET |
| MTP50N06VL | N-Channel Power FET |
| MTP50P03HDL | TMOS POWER FET LOGIC LEVEL 50 AMPERES 30 VOLTS RDS(on) = 0.025 OHM |
| MTP52N06V | TMOS POWER FET 52 AMPERES 60 VOLTS RDS(on) = 0.022 OHM |
| MTP52N06VL | TMOS POWER FET 52 AMPERES 60 VOLTS RDS(on) = 0.025 OHM |
| MTP5N20 | POWER FIELD EFFECT TRANSISTOR |
| MTP5N40E | TMOS POWER FET 5.0 AMPERES 400 VOLTS RDS(on) = 1.0 OHM |
| MTP5P06V | TMOS POWER FET 5 AMPERES 60 VOLTS RDS(on) = 0.450 OHM |
