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MTY55N20E - TMOS POWER FET 55 AMPERES 200 VOLTS RDS(on) = 0.028 OHM

Key Features

  • nce Variation 4 Motorola TMOS Power MOSFET Transistor Device Data MTY55N20E VDS , DRAIN.
  • TO.
  • SOURCE.

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📁 Similar Datasheet

Part Number Description Manufacturer
MTY14N100E Power Field Effect Transistor ON Semiconductor
MTY16N80E Power Field Effect Transistor ON Semiconductor
MTY20N50E Power MOSFET ON Semiconductor

Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
MTY100N10E TMOS POWER FET 100 AMPERES 100 VOLTS RDS(on) = 0.011 OHM
MTY10N100E TMOS POWER FET 10 AMPERES 1000 VOLTS RDS(on) = 1.3 OHM
MTY14N100E TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM
MTY16N80E TMOS POWER FET 16 AMPERES 800 VOLTS RDS(on) = 0.50 OHM
MTY25N60E TMOS POWER FET 25 AMPERES 600 VOLTS RDS(on) = 0.21 OHM

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTY55N20E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor Designer's MTY55N20E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters, PWM motor controls, and other inductive loads. The avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.