SLB150N06T
SLB150N06T is 60V N-Channel MOSFET manufactured by Msemitek.
Description
This Power MOSFET is produced using Msemitek‘s advanced TRENCH technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.
Application PWM Application Load Switch Power Management
Features
- 150A, 60V, RDS(on)Typ = 3.1mΩ@VGS = 10 V
- Very Low On-resistance RDS(ON)
- High ruggedness
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
TO-263
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS
IDM VGSS EAS EAR dv/dt PD R θJC TJ, TSTG
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25℃)
- Continuous (TC = 100℃)
Drain Current
- Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25℃)
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
- Drain current limited by maximum junction temperature.
SLB150N06T 60 150 98 450 ±20 552 200 4.5 238...
