SLB150N06T - 60V N-Channel MOSFET

Product Overview

Msemitek

Datasheet Details

Part number	SLB150N06T
Manufacturer	Msemitek
File Size	0.96 MB
Description	60V N-Channel MOSFET
Datasheet	SLB150N06T Datasheet
Additional preview pages of the SLB150N06T datasheet.

Product details

Description

This Power MOSFET is produced using Msemitek‘s advanced TRENCH technology.

This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

- 150A, 60V, RDS(on)Typ = 3.1mΩ@VGS = 10 V - Very Low On-resistance RDS(ON) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D G S TO-263 D G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS EAR dv/dt PD R θJC TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) Drain Current - Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2).

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Published: Mar 15, 2025 |