SLB60R075E7D
SLB60R075E7D is 60V N-Channel MOSFET manufactured by Msemitek.
Description
This Power MOSFET is produced using Msemitek‘s advanced Superjunction MOSFET technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switched mode power supplies.
Features
- 50A, 650V@ TJ,max, RDS(on)Typ =64mΩ@VGS = 10 V
- Low gate charge(typ. Qg =80n C)
- High ruggedness
- Ultra fast switching
- 100% avalanche tested
- Improved dv/dt capability
TO-263
TO-247
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS ID
IDM VGSS EAS IAR EAR dv/dt
TJ, TSTG
Parameter Drain-Source Voltage Drain Current
- Continuous (TC = 25℃)
- Continuous (TC = 100℃) Drain Current
- Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt MOSFET dv/dt Power Dissipation (TC = 25℃)
- Derate above 25℃ Operating and Storage Temperature Range
(Note 1)
(Note 2) (Note 1) (Note 1) (Note 3)
SLB60R075E7D / SLH60R075E7D
50-
32.5-
140-...
