Datasheet Details
| Part number | SLB160N10G3 |
|---|---|
| Manufacturer | Msemitek |
| File Size | 1.02 MB |
| Description | 100V N-Channel MOSFET |
| Datasheet |
 SLB160N10G3 Datasheet
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General Description
This Power MOSFET is produced using Msemitek‘s advanced Shielding Gate MOSFET technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Key Features
- - N-Channel:100V 160A RDS(on)Typ= 3.7mΩ@VGS = 10 V - Very Low On-resistance RDS(ON) - Low Crss - Fast switching - 100% avalanche tested - Improved dv/dt capability D D G S TO-263 Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS PD R θJC R θJA TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) Drain Current - Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy Power Dissipatio.