SLB160N10G3 Overview
This Power MOSFET is produced using Msemitek‘s advanced Shielding Gate MOSFET technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for low voltage applications such as DC/DC converters and high efficiency switching for power management...
SLB160N10G3 Key Features
- N-Channel:100V 160A RDS(on)Typ= 3.7mΩ@VGS = 10 V
- Very Low On-resistance RDS(ON)
- Low Crss
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability