SLB160N10G3
SLB160N10G3 is 100V N-Channel MOSFET manufactured by Msemitek.
Description
This Power MOSFET is produced using Msemitek‘s advanced Shielding Gate MOSFET technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for low voltage applications such as DC/DC converters and high efficiency switching for power management in portable and battery operated products.
Features
- N-Channel:100V 160A RDS(on)Typ= 3.7mΩ@VGS = 10 V
- Very Low On-resistance RDS(ON)
- Low Crss
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
TO-263
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS
IDM VGSS EAS
R θJC R θJA TJ, TSTG
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25℃)
- Continuous (TC = 100℃)
Drain Current
- Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
Power Dissipation (TC = 25℃)
Power Dissipation (TC = 100℃)
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to ambient
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
- Drain current limited by maximum junction temperature.
SLB160N10G3 100 160 102 480 ±25 1050 210 1.4 0.72
- -55 to +150 300
Units V A A A V m...
