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SLD90N10G - 100V N-Channel MOSFET

General Description

This Power MOSFET is produced using Msemitek‘s advanced Shielding Gate MOSFET technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

  • - N-Channel:100V 90A RDS(on)Typ= 6.2mΩ@VGS = 10 V RDS(on)Typ= 8.6mΩ@VGS = 4.5V - Very Low On-resistance RDS(ON) - Low Crss - Fast switching - 100% avalanche tested - Improved dv/dt capability D G S D-PAK D G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS PD R θJC TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche.

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Datasheet Details

Part number SLD90N10G
Manufacturer Msemitek
File Size 964.05 KB
Description 100V N-Channel MOSFET
Datasheet download datasheet SLD90N10G Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SLD90N10G SLD90N10G 100V N -Channel MOSFET General Description This Power MOSFET is produced using Msemitek‘s advanced Shielding Gate MOSFET technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as DC/DC converters and high efficiency switching for power management in portable and battery operated products. Features - N-Channel:100V 90A RDS(on)Typ= 6.2mΩ@VGS = 10 V RDS(on)Typ= 8.6mΩ@VGS = 4.