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MJE3055T Datasheet Complementary Power Transistors

Manufacturer: Multicomp

Overview: MJE2955T, 3055T Complementary Power Transistors Complementary Silicon Power Transistors are designed for use in general-purpose amplifier and switching applications.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Key Features

  • Power dissipation-PD = 75W at TC = 25°C.
  • DC current gain hFE = 20 (Minimum) at IC = 4.0A.
  • VCE(sat) = 1.1V (Maximum) at IC = 4.0A, IB = 400mA. Pin 1. Base 2. Collector 3. Emitter 4. Collector (Case). Dimensions Minimum Maximum A 14.68 15.31 B 9.78 10.42 C 5.01 6.52 D 13.06 14.62 E 3.57 4.07 F 2.42 3.66 G 1.12 1.36 H 0.72 0.96 I 4.22 4.98 J 1.14 1.38 K 2.20 2.97 L 0.33 0.55 M 2.48 2.98 O 3.70 3.90 Dimensions : Millimetres PNP MJE2955T NPN MJE30.

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MJE2955T Complementary Power Transistors

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