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MJE3055T

Manufacturer: Multicomp

This datasheet includes multiple variants, all published together in a single manufacturer document.

MJE3055T datasheet preview

Datasheet Details

Part number MJE3055T
Datasheet MJE3055T MJE2955T Datasheet (PDF)
File Size 250.25 KB
Manufacturer Multicomp
Description Complementary Power Transistors
MJE3055T page 2 MJE3055T page 3

MJE3055T Overview

MJE2955T, 3055T plementary Power Transistors plementary Silicon Power Transistors are designed for use in general-purpose amplifier and switching applications.

MJE3055T Key Features

  • Power dissipation-PD = 75W at TC = 25°C
  • DC current gain hFE = 20 (Minimum) at IC = 4.0A
  • VCE(sat) = 1.1V (Maximum) at IC = 4.0A, IB = 400mA
  • 55 to +150
  • 1 Power Derating
  • Collector Cut off Current (VCE = 30V, IB = 0)
  • 20 5.0
  • Unit V
  • 2 “ON” Voltage
  • 3 Active-Region Safe Operating Area

MJE3055T from other manufacturers

See all manufacturers

Brand Logo Part Number Description Other Manufacturers
ON Semiconductor Logo MJE3055T Complementary Silicon Plastic Power Transistors ON Semiconductor
INCHANGE Logo MJE3055T NPN Transistor INCHANGE
Fairchild Logo MJE3055T NPN Silicon Transistor Fairchild
ST Microelectronics Logo MJE3055T COMPLEMENTARY SILICON POWER TRANSISTORS ST Microelectronics
Motorola Logo MJE3055T 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS Motorola
Multicomp logo - Manufacturer

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MJE3055T Distributor

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