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MJE3055T - Complementary Power Transistors

Download the MJE3055T datasheet PDF. This datasheet also covers the MJE2955T variant, as both devices belong to the same complementary power transistors family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Power dissipation-PD = 75W at TC = 25°C.
  • DC current gain hFE = 20 (Minimum) at IC = 4.0A.
  • VCE(sat) = 1.1V (Maximum) at IC = 4.0A, IB = 400mA. Pin 1. Base 2. Collector 3. Emitter 4. Collector (Case). Dimensions Minimum Maximum A 14.68 15.31 B 9.78 10.42 C 5.01 6.52 D 13.06 14.62 E 3.57 4.07 F 2.42 3.66 G 1.12 1.36 H 0.72 0.96 I 4.22 4.98 J 1.14 1.38 K 2.20 2.97 L 0.33 0.55 M 2.48 2.98 O 3.70 3.90 Dimensions : Millimetres PNP MJE2955T NPN MJE30.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MJE2955T-Multicomp.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MJE3055T
Manufacturer Multicomp
File Size 250.25 KB
Description Complementary Power Transistors
Datasheet download datasheet MJE3055T Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MJE2955T, 3055T Complementary Power Transistors Complementary Silicon Power Transistors are designed for use in general-purpose amplifier and switching applications. Features: • Power dissipation-PD = 75W at TC = 25°C. • DC current gain hFE = 20 (Minimum) at IC = 4.0A. • VCE(sat) = 1.1V (Maximum) at IC = 4.0A, IB = 400mA. Pin 1. Base 2. Collector 3. Emitter 4. Collector (Case). Dimensions Minimum Maximum A 14.68 15.31 B 9.78 10.42 C 5.01 6.52 D 13.06 14.62 E 3.57 4.07 F 2.42 3.66 G 1.12 1.36 H 0.72 0.96 I 4.22 4.98 J 1.14 1.38 K 2.20 2.97 L 0.33 0.55 M 2.48 2.98 O 3.70 3.90 Dimensions : Millimetres PNP MJE2955T NPN MJE3055T 10 Ampere Complemetary Silicon Power Transistors 60 Volts 75 Watts TO-220 Page 1 31/05/05 V1.