NCE3025G Datasheet | NCE Power Semiconductor

http://.ncepower. Pb Free Product NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3025G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features - VDS =30V,ID =25A RDS(ON) < 10mΩ @ VGS=10V RDS(ON) < 14mΩ @ VGS=4.5V - High density cell design for ultra low Rdson - Fully characterized avalanche voltage and current - Good stability and uniformity with high EAS - Excellent package for good heat dissipation - Special process technology for high ESD capability Schematic diagram Application - SMPS and general purpose applications - Hard switched and high...