NCE30H12K Datasheet | NCE Power Semiconductor

Description The NCE30H12K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features - VDS =30V,ID =120A RDS(ON) <4.5mΩ @ VGS=10V (Typ:3.5mΩ) Schematic diagram - High density cell design for ultra low Rdson - Fully characterized avalanche voltage and current - Good stability and uniformity with high EAS - Excellent package for good heat dissipation - Special process technology for high ESD capability Application - Power switching application - Hard switched and high frequency circuits - Uninterruptible power supply times Only Use Marking and pin assignment 100% UIS TESTED! eng 100% ∆Vds TESTED! ongsh Package Marking and Ordering Information T Device Marking Device Device Package Reel Size TO-252-2L top view Tape width TO-252-2L - For Absolute Maximum Ratings (TA=25℃unless otherwise noted) - Quantity - Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage ±20 Drain Current-Continuous Drain Current-Continuous(TC=100℃) Pulsed Drain Current Maximum Power Dissipation Single pulse avalanche energy (Note 5) Operating Junction and Storage Temperature Range ID...