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NCE4606 Datasheet N & P-channel Enhancement Mode Power MOSFET

Manufacturer: NCE Power Semiconductor

Datasheet Details

Part number NCE4606
Manufacturer NCE Power Semiconductor
File Size 417.18 KB
Description N & P-Channel Enhancement Mode Power MOSFET
Datasheet NCE4606-NCEPowerSemiconductor.pdf

General Description

The NCE4606 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .

The plementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

General

Key Features

  • N-Channel VDS = 30V,ID =6.5A RDS(ON) < 30mΩ @ VGS=10V.
  • P-Channel VDS = -30V,ID = -7A RDS(ON) < 33mΩ @ VGS=-10V.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package N-channel P-channel Schematic diagram Marking and pin assignment Package Marking and Ordering Information SOP-8 top view Device Marking Device Device Package Reel Size Tape width 4606 NCE4606 SOP-8 Ø330mm 12mm Absolute Maximum Ratings (TA=25℃unless ot.

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