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NCE603S - N & P-Channel Enhancement Mode Power MOSFET

Description

The NCE603S uses advanced trench technology to provide excellent RDS(ON) and low gate charge .

The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

Features

  • N-Channel VDS = 60V,ID =6.3A RDS(ON) < 30mΩ @ VGS=10V Schematic diagram.
  • P-Channel VDS = -60V,ID = -6A RDS(ON) < 80mΩ @ VGS=-10V.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package Marking and pin assignment SOP-8 top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity NCE603S NCE603S SOP-8 Ø330mm 12mm 2500 units Absolute Maximum Ratings (TA=25℃unles.

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Datasheet Details

Part number NCE603S
Manufacturer NCE Power Semiconductor
File Size 406.26 KB
Description N & P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE603S Datasheet
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Full PDF Text Transcription

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http://www.ncepower.com Pb Free Product NCE603S N and P-Channel Enhancement Mode Power MOSFET Description The NCE603S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features ● N-Channel VDS = 60V,ID =6.
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