NCE60ND09AS - N-Channel Enhancement Mode Power MOSFET

Product Overview

NCE Power Semiconductor

Part number	NCE60ND09AS
Manufacturer	NCE Power Semiconductor
File Size	416.44 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE60ND09AS Datasheet
Additional preview pages of the NCE60ND09AS datasheet.

The NCE60ND09AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

VDS = 60V,ID =9A RDS(ON) < 15mΩ @ VGS=10V RDS(ON) < 18mΩ @ VGS=10V (Typ:10mΩ) (Typ:14mΩ) Schematic diagram.
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Low gate to drain charge to reduce switching losses.

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Published: Jan 20, 2025 |