NCE60ND09AS Datasheet | NCE Power Semiconductor

http://.ncepower. NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60ND09AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features - VDS = 60V,ID =9A RDS(ON) < 15mΩ @ VGS=10V RDS(ON) < 18mΩ @ VGS=10V (Typ:10mΩ) (Typ:14mΩ) Schematic diagram - High density cell design for ultra low Rdson - Fully characterized avalanche voltage and current - Low gate to drain charge to reduce switching losses Application - Power switching application - Load switch Marking and pin assignment SOP-8 top view Package Marking and Ordering Information Device...