Datasheet Summary
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Pb Free Product
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE60ND18G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
- VDS =60V,ID =18A RDS(ON) <35mΩ @ VGS=10V
Schematic diagram
RDS(ON) <40mΩ @ VGS=4.5V
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
- Special process technology for high ESD capability
Application
- Power switching application
- Hard switched and high frequency...