NCE60TD60BP
NCE60TD60BP is Trench FS II Fast IGBT manufactured by NCE Power Semiconductor.
Description
:
Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation;
Features
Trench FSII Technology offering
- Very low VCE(sat)
- High speed switching
- Positive temperature coefficient in VCE(sat)
- Very tight parameter distribution
- High ruggedness, temperature stable behavior
Application
- Air Condition
- Inverters
- Motor drives
Schematic diagram
Package Marking and Ordering Information
Device
Device Package Device Marking
NCE60TD60BT
TO-247
NCE60TD60BT
TO-3P
Absolute Maximum Ratings (TC=25°C unless otherwise noted)
TO-3P
Symbol
Parameter
Value
VCES
Collector-Emitter Voltage
VGES
Gate- Emitter Voltage
±30
Collector Current
Collector Current @TC = 100 °C
ICplus
Pulsed Collector Current,tp limited by...