NCE60TD60BT Datasheet | NCE Power Semiconductor

Description : Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering - Very low VCE（sat） - High speed switching - Positive temperature coefficient in VCE（sat） - Very tight parameter distribution - High ruggedness, temperature stable behavior Application - Air Condition - Inverters - Motor drives Schematic diagram Package Marking and Ordering Information Device Device Package Device Marking TO-247 NCE60TD60BP TO-3P NCE60TD60BP Absolute Maximum Ratings (TC=25°C unless otherwise noted) TO-3P Symbol Parameter Value VCES Collector-Emitter Voltage VGES Gate- Emitter Voltage ±30 Collector Current Collector Current @TC = 100 °C ICplus Pulsed Collector Current，tp limited by...