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NCE8804 - N-Channel Enhancement Mode Power MOSFET

Description

The NCE8804 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.

This device is suitable for use as a load switch or in PWM applications .It is ESD protested.

Features

  • VDS = 20V,ID =8A RDS(ON) < 19mΩ @ VGS=2.5V RDS(ON) < 15mΩ @ VGS=4.5V ESD Rating: 2000V HBM.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package Schematic diagram Marking and pin assignment.

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Datasheet Details

Part number NCE8804
Manufacturer NCE Power Semiconductor
File Size 299.72 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE8804 Datasheet

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Full PDF Text Transcription

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http://www.ncepower.com Pb Free Product NCE8804 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE8804 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Features ● VDS = 20V,ID =8A RDS(ON) < 19mΩ @ VGS=2.5V RDS(ON) < 15mΩ @ VGS=4.
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