NCEP0160 Datasheet PDF - NCE Power Semiconductor N-Channel Super Trench Power MOSFET Specs

NCEP0160 - N-Channel Super Trench Power MOSFET

Datasheet Summary

Description

The NCEP0160 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

Features

VDS =100V,ID =60A RDS(ON) =9.2mΩ(typical) @ VGS=10V.
Excellent gate charge x RDS(on) product(FOM).
Very low on-resistance RDS(on).
175 °C operating temperature.
Pb-free lead plating.
100% UIS tested.

Datasheet Details

Part number	NCEP0160
Manufacturer	NCE Power Semiconductor
File Size	427.26 KB
Description	N-Channel Super Trench Power MOSFET
Datasheet	NCEP0160 Datasheet
Additional preview pages of the NCEP0160 datasheet.

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Full PDF Text Transcription

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http://www.ncepower.com Pb Free Product NCEP0160 NCE N-Channel Super Trench Power MOSFET Description The NCEP0160 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. General Features ● VDS =100V,ID =60A RDS(ON) =9.

Published: Oct 26, 2024 |