NCEP0160F Datasheet PDF - NCE Power Semiconductor N-Channel Super Trench Power MOSFET Specs

NCEP0160F - N-Channel Super Trench Power MOSFET

Datasheet Summary

Description

The NCEP0160F uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

Features

VDS =100V,ID =60A RDS(ON) =9.2mΩ(typical) @ VGS=10V.
Excellent gate charge x RDS(on) product(FOM).
Very low on-resistance RDS(on).
175 °C operating temperature.
Pb-free lead plating.
100% UIS tested Schematic diagram.

Datasheet Details

Part number	NCEP0160F
Manufacturer	NCE Power Semiconductor
File Size	445.16 KB
Description	N-Channel Super Trench Power MOSFET
Datasheet	NCEP0160F Datasheet
Additional preview pages of the NCEP0160F datasheet.

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Full PDF Text Transcription

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http://www.ncepower.com Pb Free Product NCEP0160F NCE N-Channel Super Trench Power MOSFET Description The NCEP0160F uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. General Features ● VDS =100V,ID =60A RDS(ON) =9.

Published: Jun 3, 2018 |