• Part: NCEP0160F
  • Description: N-Channel Super Trench Power MOSFET
  • Category: MOSFET
  • Manufacturer: NCE Power Semiconductor
  • Size: 445.16 KB
Download NCEP0160F Datasheet PDF
NCE Power Semiconductor
NCEP0160F
Description The NCEP0160F uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low bination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. General Features - VDS =100V,ID =60A RDS(ON) =9.2mΩ(typical) @ VGS=10V - Excellent gate charge x RDS(on) product(FOM) - Very low on-resistance RDS(on) - 175 °C operating temperature - Pb-free lead plating - 100% UIS tested Schematic diagram Application - DC/DC Converter - Ideal for high-frequency switching and synchronous rectification 100% UIS TESTED! 100% ∆Vds TESTED! Marking and pin assignment TO-220F top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape...