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NCEP0160G - N-Channel Super Trench Power MOSFET

Datasheet Summary

Description

The NCEP0160G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

Features

  • VDS =100V,ID =60A RDS(ON).

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Datasheet preview – NCEP0160G

Datasheet Details

Part number NCEP0160G
Manufacturer NCE Power Semiconductor
File Size 330.36 KB
Description N-Channel Super Trench Power MOSFET
Datasheet download datasheet NCEP0160G Datasheet
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Full PDF Text Transcription

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http://www.ncepower.com Pb Free Product NCEP0160G NCE N-Channel Super Trench Power MOSFET Description The NCEP0160G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. General Features ● VDS =100V,ID =60A RDS(ON) <8.
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