Part NCEP0160AG
Description N-Channel Super Trench Power MOSFET
Category MOSFET
Manufacturer NCE Power Semiconductor
Size 389.07 KB
NCE Power Semiconductor

NCEP0160AG Overview

Description

The NCEP0160AG uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

Key Features

  • VDS =100V,ID =60A RDS(ON) <8.8mΩ @ VGS=10V RDS(ON) <11.5mΩ @ VGS=4.5V Only D D D D DDDD
  • Excellent gate charge x RDS(on) product(FOM)
  • Very low on-resistance RDS(on)
  • 175 °C operating temperature
  • Pb-free lead plating
  • 100% UIS tested mes Application i
  • DC/DC Converter t
  • Ton Parameter Symbol r Drain-Source Voltage VDS Fo Gate-Source Voltage VGS Limit 100 ±20 Quantity