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NCEP0160AG - N-Channel Super Trench Power MOSFET

General Description

frequency switching performance.

low combination of RDS(ON) and Qg.

Key Features

  • Schematic Diagram.
  • VDS =100V,ID =60A RDS(ON).

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Datasheet Details

Part number NCEP0160AG
Manufacturer NCE Power Semiconductor
File Size 389.07 KB
Description N-Channel Super Trench Power MOSFET
Datasheet download datasheet NCEP0160AG Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Pb Free Product http://www.ncepower.com NCEP0160AG NCE N-Channel Super Trench Power MOSFET （Primary Version） Description The NCEP0160AG uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. General Features Schematic Diagram ● VDS =100V,ID =60A RDS(ON) <8.8mΩ @ VGS=10V RDS(ON) <11.5mΩ @ VGS=4.