NCEP078N10AK
NCEP078N10AK is N-Channel Super Trench II Power MOSFET manufactured by NCE Power Semiconductor.
Description
General Features
The series of devices uses Super Trench II technology that is
- VDS =100V,ID =75A uniquely optimized to provide the most efficient high frequency
RDS(ON)=7.2mΩ , typical@ VGS=10V switching performance. Both conduction and switching power
RDS(ON)=9.4mΩ , typical@ VGS=4.5V losses are minimized due to an extremely low bination of
RDS(ON) and Qg. This device is ideal for high-frequency switching
- Excellent gate charge x RDS(on) product(FOM) and synchronous rectification.
- Very low on-resistance RDS(on)
Application
- 175 °C operating temperature
- DC/DC Converter
- Ideal for high-frequency rectification switching and synchronous
- Pb-free lead plating y 100% UIS TESTED! Onl 100% ∆Vds TESTED!
TO-252
Use times
Schematic Diagram heng Package Marking and Ordering Information s Device Marking
Device
Device Package g NCEP078N10AK NCEP078N10AK
TO-252
Reel Size
- Tape width
- Ton Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Quantity
- r Drain-Source Voltage Fo Gate-Source Voltage
Parameter
Symbol VDS VGS
Limit
100 ±20
Unit
Drain Current-Continuous
Drain Current-Continuous(TC=100℃)
ID (100℃)
Pulsed Drain Current
Maximum Power...
