Datasheet4U Logo Datasheet4U.com

NCEP078N10AK - N-Channel Super Trench II Power MOSFET

Description

General

Features

  • The series of devices uses Super Trench II technology that is.
  • VDS =100V,ID =75A uniquely optimized to provide the most efficient high frequency RDS(ON)=7.2mΩ , typical@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=9.4mΩ , typical@ VGS=4.5V losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching.
  • Excellent gate charge x RDS(on) product(FOM) and synchronous rectification.
  • V.

📥 Download Datasheet

Datasheet Details

Part number NCEP078N10AK
Manufacturer NCE Power Semiconductor
File Size 489.45 KB
Description N-Channel Super Trench II Power MOSFET
Datasheet download datasheet NCEP078N10AK Datasheet

📁 Similar Datasheet

Other Datasheets by NCE Power Semiconductor

Full PDF Text Transcription

Click to expand full text
NCEP078N10AK NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is ● VDS =100V,ID =75A uniquely optimized to provide the most efficient high frequency RDS(ON)=7.2mΩ , typical@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=9.4mΩ , typical@ VGS=4.5V losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching ● Excellent gate charge x RDS(on) product(FOM) and synchronous rectification.
Published: |