NCEP078N10G Datasheet | NCE Power Semiconductor

Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency - VDS =100V,ID =75A switching performance. Both conduction and switching power RDS(ON)=7.4mΩ , typical@ VGS=10V losses are minimized due to an extremely low bination of - Excellent gate charge x RDS(on) product(FOM) RDS(ON) and Qg. This device is ideal for high-frequency switching - Very low on-resistance RDS(on) and synchronous rectification. - 150 °C operating temperature Application - Pb-free lead plating - DC/DC Converter - Ideal for high-frequency switching and synchronous rectification 100% UIS TESTED! Only 100% ΔVds TESTED! DFN 5X6 Use times Top View Bottom View Schematic Diagram heng Package Marking and Ordering Information s Device Marking Device Device Package g P078N10G DFN5X6-8L Reel Size - Tape width - Ton Absolute Maximum Ratings (TC=25℃unless otherwise noted) Quantity - r Drain-Source Voltage Fo Gate-Source Voltage Parameter Symbol VDS VGS Limit 100 ±20 Unit Drain Current-Continuous Drain Current-Continuous(TC=100℃) ID (100℃) Pulsed Drain...