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NCEP078N10G - N-Channel Super Trench II Power MOSFET

Description

The series of devices uses Super Trench II technology that is General

Features

  • uniquely optimized to provide the most efficient high frequency.
  • VDS =100V,ID =75A switching performance. Both conduction and switching power RDS(ON)=7.4mΩ , typical@ VGS=10V losses are minimized due to an extremely low combination of.
  • Excellent gate charge x RDS(on) product(FOM) RDS(ON) and Qg. This device is ideal for high-frequency switching.
  • Very low on-resistance RDS(on) and synchronous rectification.
  • 150 °C operating temperature.

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Datasheet Details

Part number NCEP078N10G
Manufacturer NCE Power Semiconductor
File Size 1.05 MB
Description N-Channel Super Trench II Power MOSFET
Datasheet download datasheet NCEP078N10G Datasheet

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NCEP078N10G NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency ● VDS =100V,ID =75A switching performance. Both conduction and switching power RDS(ON)=7.4mΩ , typical@ VGS=10V losses are minimized due to an extremely low combination of ● Excellent gate charge x RDS(on) product(FOM) RDS(ON) and Qg. This device is ideal for high-frequency switching ● Very low on-resistance RDS(on) and synchronous rectification.
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