NCEP11N10AQU Datasheet | NCE Power Semiconductor

http://.ncepower. NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP11N10AQU uses Super Trench II technology that is - VDS =100V,ID =55A uniquely optimized to provide the most efficient high frequency RDS(ON)=10.5mΩ (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=13.5mΩ (typical) @ VGS=4.5V losses are minimized due to an extremely low bination of - Excellent gate charge x RDS(on) product(FOM) RDS(ON) and Qg. This device is ideal for high-frequency switching - Very low on-resistance RDS(on) and synchronous rectification. - 150 °C operating temperature Application - DC/DC Converter - Ideal for high-frequency switching and synchronous rectification - Pb-free lead plating ly 100% UIS TESTED! On100% ∆Vds TESTED! DFN 3.3X3.3 Use times Top View Bottom View Schematic Diagram heng Package Marking and Ordering Information s Device Marking Device Device Package g NCEP11N10AQU NCEP11N10AQU DFN3.3X3.3-8L Reel Size - Tape width - Ton...