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2SC5192 - NPN TRANSISTOR

Key Features

  • Low Voltage Operation, Low Phase Distortion.
  • Low Noise NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz.
  • Large Absolute Maximum Collector Current IC = 100 mA.

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Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
2SC5191 NPN TRANSISTOR
2SC5193 NPN TRANSISTOR
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2SC5194-T1 NPN TRANSISTOR
2SC5194-T2 NPN TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET SILICON TRANSISTOR 2SC5192 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz • Large Absolute Maximum Collector Current IC = 100 mA PACKAGE DRAWINGS (Unit: mm) +0.2 0.4 –0.05 1.5 +0.2 –0.1 2 0.85 0.95 2.9±0.2 (1.8) EIAJ: SC-61 1 +0.1 –0.05 0.6 PART NUMBER 2SC5192-T1 QUANTITY 3 Kpcs/Reel PACKING STYLE 5˚ 5˚ 1.1 –0.1 2SC5192-T2 3 Kpcs/Reel Embossed tape 8 mm wide. Pin 1 (Collector), Pin 2 (Emitter) face to perforation side of the tape. 5˚ 0 to 0.1 5˚ Remark If you require an evaluation sample, please contact an NEC Sales Representative.