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2SC5193 - NPN TRANSISTOR

Key Features

  • Low Voltage Operation, Low Phase Distortion.
  • Low Noise NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz.
  • Large Absolute Maximum Collector Current IC = 100 mA.

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Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
2SC5191 NPN TRANSISTOR
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC5193 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR COMPACT MINI MOLD FEATURES • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • Large Absolute Maximum Collector Current IC = 100 mA PACKAGE DRAWING (Units: mm) 2.1±0.1 1.25±0.1 0.3 −0 0.65 0.65 2.0±0.2 +0.1 • Compact Mini Mold Package EIAJ: SC-70 2 T88 1 ORDERING INFORMATION PART NUMBER 2SC5193-T1 0.3 QUANTITY 3 Kpcs/Reel PACKING STYLE 0.9±0.1 Marking 0.15 −0.05 Embossed tape 8 mm wide. Pin 3 (collector) face to perforation side of the tape. Embossed tape 8 mm wide. Pin 1 (Emitter), Pin 2 (Base) face to perforation side of the tape.