NEC 2SJ357
The 2SJ357 is a P-channel vertical MOS FET that can be used as a switching element. The 2SJ357 can be directly driven by an IC operating at 5 V. The 2SJ357 features a low on-resistance and excellent switching characteristics, and is suitable for applications such as actuator driver and DC/DC converter.| Part No. | 2SJ357 |
|---|---|
| Datasheet | 2SJ357 Download |
| Manufacturer |  NEC |
| Description | P-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
1.0 1 0.5 ±0.1 2 3● New-type compact package Has advantages of packages for small signals and for power transistors, and compensates those disadvantages
● Can be directly driven by an IC operating at 5 V.
● Low on-resistance RDS(ON) = 0.35 Ω MAX. @VGS = –4 V, ID = –1.5 A RDS(ON) = 0.20 Ω MAX. @VGS = –10 V, ID = –1.5 A 0.5 ±0.1 2.1 0.4 ±0.05 0.85 ±0.1 4.2 Equivalent Circuit Drain (D) Electrode Connection 1. Source Internal 2. Drain Diode 3. Gate Marking: UA1 Gate (G) Gate Protect Diode Source (S) QUALITY GRADE Standard Please refer to "Quality Grades on NEC Semiconductor Devices" (Document No. C11531E) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications.
ABSOLUTE MAXIMUM RATINGS
(TA = +25 °C) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID(DC) ID(pulse) PW ≤ 10 ms Duty Cycle ≤ 1 % Mounted on ceramic board of 7.5 cm2 × 0.7 mm VGS = 0 VDS = 0 Condit...
