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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ357
P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH
The 2SJ357 is a P-channel vertical MOS FET that can be used as a switching element. The 2SJ357 can be directly driven by an IC operating at 5 V. The 2SJ357 features a low on-resistance and excellent switching characteristics, and is suitable for applications such as actuator driver and DC/DC converter.
Package Drawings (unit: mm)
5.7 ±0.1 2.0 ±0.2 1.5 ±0.1
FEATURES
1.0
1 0.5 ±0.1
2
3
• New-type compact package Has advantages of packages for small signals and for power transistors, and compensates those disadvantages • Can be directly driven by an IC operating at 5 V. • Low on-resistance RDS(ON) = 0.35 Ω MAX. @VGS = –4 V, ID = –1.5 A RDS(ON) = 0.20 Ω MAX. @VGS = –10 V, ID = –1.5 A
0.5 ±0.1 2.1 0.
2SJ357 Datasheet
