NEC 2SJ647
The 2SJ647 is a switching device which can be driven directly by a 2.5 V power source. The 2SJ647 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.| Part No. | 2SJ647 |
|---|---|
| Datasheet | 2SJ647 Download |
| Manufacturer |  NEC |
| Description | MOS FIELD EFFECT TRANSISTOR |
| Buy | Stock & Price |
DESCRIPTION
PACKAGE DRAWING (Unit: mm) 0.3 +0.1 –0 2.1 ± 0.1 1.25 ± 0.1 0.65FEATURES
● 2.5 V drive available● Low on-state resistance RDS(on)1 = 1.45 Ω MAX. (VGS = −4.5 V, ID = −0.2 A) RDS(on)2 = 1.55 Ω MAX. (VGS = −4.0 V, ID = −0.2 A) RDS(on)3 = 2.98 Ω MAX. (VGS = −2.5 V, ID = −0.15 A) 2.0 ± 0.2 2 0.65 1 3 0.3 Marking 0.15 +0.1 –0.05 0.9 ± 0.1 0.3 +0.1 –0 ORDERING INFORMATION PART NUMBER 2SJ647 PACKAGE SC-70 (SSP) 0 to 0.1 1 : Source 2 : Gate 3 : Drain Remark Marking: H22
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TA = 25°C) Drain Current (pulse) Note1 Note2 EQUIVALENT CIRCUIT −20 m12 m0.4 m1.6 0.2 150 −55 to +150 V V A A W °C °C Gate Gate Protection Diode Body Diode Drain VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg Total Power Dissipation Channel Temperature Storage Temperature Source Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2 2. Mounted on FR-4 board of 2500 mm x 1.1 mm. Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
