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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2857
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
DESCRIPTION The 2SK2857 is a switching device which can be driven directly
by a 5V power source. The 2SK2857 features a low on-state resistance and excellent
Switching Characteristics, and is suitable for applications such as actuator driver.
FEATURES • Can be driven by a 5V power source. • Low On-state resistance :
RDS(on)1 = 220 mΩ MAX. (VGS = 4 V, ID = 1.5 A) RDS(on)2 = 150 mΩ MAX. (VGS = 10 V, ID = 2.5 A)
PACKAGE DRAWING (Unit : mm)
0.8MIN.
2.5±0.1 4.0±0.25
4.5±0.1 1.6±0.2
1 23
1.5±0.1
Electrode Connection
1.Souce 2.Drain 3.Gate
0.42 0.42±0.06
±0.06
1.5
0.47 ±0.06
3.0
0.41+0.03 -0.
2SK2857 Datasheet
