Datasheet Details
| Part number | 2SK2858 |
|---|---|
| Manufacturer | NEC (now Renesas Electronics) |
| File Size | 50.82 KB |
| Description | N-Channel MOSFET |
| Datasheet | 2SK2858_NEC.pdf |
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Overview: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2858 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED.
| Part number | 2SK2858 |
|---|---|
| Manufacturer | NEC (now Renesas Electronics) |
| File Size | 50.82 KB |
| Description | N-Channel MOSFET |
| Datasheet | 2SK2858_NEC.pdf |
|
|
|
The 2SK2858 is a switching device which can be driven directly by a 2.5-V power source.
The 2SK2858 has excellent switching characteristics, and is suitable for use as a high-speed switching device in digital circuits.
PACKAGE DRAWING (Unit : mm) 0.3 +0.1 –0 2.1 ± 0.1 1.25 ± 0.1 0.65 0.65 • Can be driven by a 2.5-V power source • Low gate cut-off voltage 1 3 0.3 Marking 0.15 +0.1 –0.05 PART NUMBER 2SK2858 PACKAGE SC-70(SSP) 0.9 ± 0.1 ORDERING INFORMATION ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse) 5 Note VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg 30 ±20 ±0.1 ±0.4 150 150 –55 to +150 V V A A mW °C °C Gate Gate Protection Diode Marking: G24 EQUIVALENT CIRCUIT Drain Electrode Connection 1.Source Internal 2.Gate Diode 3.Drain Total Power Dissipation Channel Temperature Storage Temperature Note PW ≤ 10 µs, Duty Cycle ≤ 1 % Remark Source The diode connected between the gate and source of the transistor serves as a protector against ESD.
| Part Number | Description |
|---|---|
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