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2SK2981 - SWITCHING N-CHANNEL POWER MOS FET

General Description

This product is N-Channel MOS Field Effect Transistor designed for high current switching applications.

Key Features

  • 6.5 ±0.2 5.0 ±0.2 1.6 ±0.2 1.5.
  • 0.1.
  • Low on-resistance RDS(on)1 = 27 mΩ (MAX. ) (VGS = 10 V, ID = 10 A) RDS(on)2 = 40 mΩ (MAX. ) (VGS = 4.5 V, ID = 10 A) RDS(on)3 = 50 mΩ (MAX. ) (VGS = 4 V, ID = 10 A).
  • Low Ciss : Ciss = 860 pF (TYP. ).
  • Built-in gate protection diode +0.2 2.3 ±0.2 0.5 ±0.1 4 1 2 3 1.3 MAX. 7.0 MIN. 5.5 ±0.2 13.7 MIN. 0.6 ±0.1 2.3 2.3 0.6 ±0.1.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2981 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. PACKAGE DRAWING (Unit : mm) FEATURES 6.5 ±0.2 5.0 ±0.2 1.6 ±0.2 1.5 –0.1 • Low on-resistance RDS(on)1 = 27 mΩ (MAX.) (VGS = 10 V, ID = 10 A) RDS(on)2 = 40 mΩ (MAX.) (VGS = 4.5 V, ID = 10 A) RDS(on)3 = 50 mΩ (MAX.) (VGS = 4 V, ID = 10 A) • Low Ciss : Ciss = 860 pF (TYP.) • Built-in gate protection diode +0.2 2.3 ±0.2 0.5 ±0.1 4 1 2 3 1.3 MAX. 7.0 MIN. 5.5 ±0.2 13.7 MIN. 0.6 ±0.1 2.3 2.3 0.6 ±0.1 ORDERING INFORMATION PART NUMBER 2SK2981 2SK2981-Z PACKAGE TO-251 0.8 4.3 MAX. 1. 2. 3. 4. Gate Drain Source Fin (Drain) TO-251(MP-3) 1.5 –0.1 +0.2 0.75 6.5 ±0.2 5.0 ±0.