2SK2983 Description
This product is N-Channel MOS Field Effect Transistor designed for high current switching application.
2SK2983 Key Features
- Low on-resistance RDS(on)1 = 20 mΩ (MAX.) (VGS = 10 V, ID = 15 A) RDS(on)2 = 27 mΩ (MAX.) (VGS = 4.5 V, ID = 15 A)
- Low Ciss Ciss = 1200 pF TYP
- Built-in gate protection diode