Datasheet Summary
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD
Features
- Low VDD Use
- Driving Battery : (VDS = 3.5 V) NF = 1.8 dB TYP. (f = 900 MHz) GPS = 18.0 dB TYP. (f = 900 MHz) Embossed Type Taping
2.9±0.2 (1.8)
PACKAGE DIMENSIONS
(Unit: mm)
2.8 +0.2
- 0.3 1.5 +0.2
- 0.1
2 3 0.4 +0.1
- 0.05 4 0.4 +0.1
- 0.05 0.95
- Low Noise Figure :
- High Power Gain :
- Suitable for use as RF amplifier in UHF TV tuner.
- Automatically Mounting :
- Package : 4 Pins Mini...