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3SK253 - RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD

Key Features

  • Low VDD Use.
  • Driving Battery : (VDS = 3.5 V) NF = 1.8 dB TYP. (f = 900 MHz) GPS = 18.0 dB TYP. (f = 900 MHz) Embossed Type Taping 2.9±0.2 (1.8).

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Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
3SK252 RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD
3SK254 RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD
3SK255 RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK253 RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES • Low VDD Use • Driving Battery : (VDS = 3.5 V) NF = 1.8 dB TYP. (f = 900 MHz) GPS = 18.0 dB TYP. (f = 900 MHz) Embossed Type Taping 2.9±0.2 (1.8) PACKAGE DIMENSIONS (Unit: mm) 2.8 +0.2 –0.3 1.5 +0.2 –0.1 2 3 0.4 +0.1 – 0.05 4 0.4 +0.1 – 0.05 0.95 • Low Noise Figure : • High Power Gain : • Suitable for use as RF amplifier in UHF TV tuner.