3SK259
3SK259 is Silicon N Channel Dual Gate MOS Type FET manufactured by Toshiba.
TOSHIBA Field Effect Transistor Silicon N Channel Dual Gate MOS Type
TV Tuner, UHF RF Amplifier Applications TV Tuner VHF Wide Band RF Amplifier Applications
Unit: mm
- Superior cross modulation performance.
- Low reverse transfer capacitance: Crss = 0.025 pF (typ.)
- Low noise figure: NF = 2.6dB (typ.)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage Gate 1-source voltage Gate 2-source voltage Drain current Drain power dissipation Channel temperature Storage temperature range
Symbol
VDS VG1S VG2S
ID PD Tch Tstg
Rating
13.5 ±8 ±8 30 100 125 -55~125
Unit
V V V mA mW °C °C
Electrical Characteristics (Ta = 25°C)
JEDEC
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JEITA
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TOSHIBA
2-2K1B
Weight...
