3SK259 Overview
Key Features
- Superior cross modulation performance
- Low reverse transfer capacitance: Crss = 0.025 pF (typ.)
| Part | 3SK259 |
|---|---|
| Description | Silicon N Channel Dual Gate MOS Type FET |
| Manufacturer | Toshiba |
| Size | 172.42 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| 3SK253 | NEC | RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD |
| 3SK252 | NEC | RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD |
| 3SK254 | NEC | RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD |
| 3SK255 | NEC | RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD |