Datasheet4U Logo Datasheet4U.com

3SK257 - Silicon N Channel Dual Gate MOS Type FET

📥 Download Datasheet

Datasheet Details

Part number 3SK257
Manufacturer Toshiba
File Size 294.03 KB
Description Silicon N Channel Dual Gate MOS Type FET
Datasheet download datasheet 3SK257 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
3SK252 RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD NEC
3SK253 RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD NEC
3SK254 RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD NEC
3SK255 RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD NEC
3SK206 RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL GATE MES FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD NEC

Other Datasheets by Toshiba

Part Number Description
3SK256 Silicon N Channel Dual Gate MOS Type FET
3SK258 Silicon N Channel Dual Gate MOS Type FET
3SK259 Silicon N Channel Dual Gate MOS Type FET
3SK207 Silicon N Channel Dual Gate MOS Type FET
3SK225 Silicon N Channel Dual Gate MOS Type FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
TOSHIBA Field Effect Transistor Silicon N Channel Dual Gate MOS Type 3SK257 3SK257 TV Tuner, VHF RF Amplifier Applications FM Tuner Applications TV Tuner, UHF RF Amplifier Applications Superior cross modulation performance. • Low noise figure: NF = 2.0dB (typ.) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDS 13.5 V Gate 1-source voltage VG1S ±8 V Gate 2-source voltage VG2S ±8 V Drain current ID 30 mA Drain power dissipation PD 100 mW Channel temperature Tch 125 °C Storage temperature range Tstg −55~125 °C JEDEC ― Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.